| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a large emitted light quantity from a light emitting diode which is increased in chip size by improving the luminous efficiency of the diode. <P>SOLUTION: The light emitting diode is provided with an n-type GaAs buffer layer 2, n-type Al<SB>0.75</SB>Ga<SB>0.25</SB>As layer 3, p-type Al<SB>0.4</SB>Ga<SB>0.6</SB>As light emitting layer 4, p-type Al<SB>0.75</SB>Ga<SB>0.25</SB>As layer 5, and p-type GaAs contact layer 6 successively laminated upon an n-type GaAs substrate 1 and an n-side electrode 7 on the rear surface of the substrate 1. The surface of the diode on the p-side electrode 8 side which is the main light emitting surface of the diode is divided into six parts by forming grooves 9 on the surface by etching the surface to the surface of the p-type Al<SB>0.4</SB>Ga<SB>0.6</SB>As light emitting layer 4. Thereafter, cleaving is performed at every element in a size of about 1.0 mm×0.65 mm. <P>COPYRIGHT: (C)2004,JPO |
