| 摘要 |
PROBLEM TO BE SOLVED: To make pattern dimension constant even if variation exists in the thickness of an underlayer resist layer, when a three-layer resist process is performed by a dry development method, concerning the method for forming a multylayer resist pattern and the etching method. SOLUTION: In the three-layer resist process wherein an underlayer resist layer 2, an intermediate layer 3 and a photoresist layer (upper resist layer) 4 are laminated and used, exposure dimension of the pattern is made small as the thickness of the underlayer resist layer 2 of a part corresponding to the pattern becomes thin. COPYRIGHT: (C)2004,JPO |
