| 摘要 |
PROBLEM TO BE SOLVED: To reduce the quantity of etching for cleaning the front surface of a substrate and to shorten the time required for cleaning the front surface of the substrate. SOLUTION: Substrate processing equipment comprises a spin chuck 1 which turns while holding a wafer W nearly horizontally, an ozone water nozzle 2 for supplying ozone water on a front surface (upper surface) of the wafer W held by the spin chuck 1, an HF nozzle 3 for supplying HF (hydrofluoric acid) on the front surface of the wafer W held by the spin chuck 1, and a soft spray nozzle 4 for supplying a jet flow of droplets of DIW (pure water) on the front surface of the wafer W held by the spin chuck 1. In parallel with supplying ozone water on the front surface of the wafer W from the ozone water nozzle 2 or at a prescribed time after the start of the supply of ozone water, a jet of soft spray is supplied on the front surface of the wafer W from the soft spray nozzle 4 to physically remove particles using the soft spray. COPYRIGHT: (C)2004,JPO
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