发明名称 |
Production of a microstructure, e.g. in the manufacture of semiconductor devices, comprises crosslinking a film with acid released by a resist structure |
摘要 |
Production of a microstructure comprises applying an acid-releasing resist structure onto a support; coating the resist structure with a composition comprising a water-soluble monomer, oligomer or polymer having carboxy-reactive functions to form a film; allowing acid from the resist structure to crosslink the film and form a water- or alkali-insoluble film in areas in contact with the resist structure; and removing water- or alkali-soluble areas of the film. Production of a microstructure comprises: (a) applying an acid-releasing resist structure onto a support; (b) coating the resist structure with a composition comprising water and/or a water-miscible organic solvent and a water-soluble monomer, oligomer or polymer having carboxy-reactive functions to form a microstructure-forming film; (c) allowing acid from the resist structure to crosslink the film and form a water- or alkali-insoluble film in areas in contact with the resist structure; and (d) removing water- or alkali-soluble areas of the film. An Independent claim is also included for a microstructure-forming material as above.
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申请公布号 |
DE10339717(A1) |
申请公布日期 |
2004.03.11 |
申请号 |
DE20031039717 |
申请日期 |
2003.08.28 |
申请人 |
RENESAS TECHNOLOGY CORP., TOKIO/TOKYO |
发明人 |
TERAI, MAMORU;TOYOSHIMA, TOSHIYUKI;ISHIBASHI, TAKEO;TARUTANI, SHINJI |
分类号 |
G03F7/20;G03F7/40;H01L21/312;(IPC1-7):G03F7/038;G03F7/11 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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