发明名称 Production of a microstructure, e.g. in the manufacture of semiconductor devices, comprises crosslinking a film with acid released by a resist structure
摘要 Production of a microstructure comprises applying an acid-releasing resist structure onto a support; coating the resist structure with a composition comprising a water-soluble monomer, oligomer or polymer having carboxy-reactive functions to form a film; allowing acid from the resist structure to crosslink the film and form a water- or alkali-insoluble film in areas in contact with the resist structure; and removing water- or alkali-soluble areas of the film. Production of a microstructure comprises: (a) applying an acid-releasing resist structure onto a support; (b) coating the resist structure with a composition comprising water and/or a water-miscible organic solvent and a water-soluble monomer, oligomer or polymer having carboxy-reactive functions to form a microstructure-forming film; (c) allowing acid from the resist structure to crosslink the film and form a water- or alkali-insoluble film in areas in contact with the resist structure; and (d) removing water- or alkali-soluble areas of the film. An Independent claim is also included for a microstructure-forming material as above.
申请公布号 DE10339717(A1) 申请公布日期 2004.03.11
申请号 DE20031039717 申请日期 2003.08.28
申请人 RENESAS TECHNOLOGY CORP., TOKIO/TOKYO 发明人 TERAI, MAMORU;TOYOSHIMA, TOSHIYUKI;ISHIBASHI, TAKEO;TARUTANI, SHINJI
分类号 G03F7/20;G03F7/40;H01L21/312;(IPC1-7):G03F7/038;G03F7/11 主分类号 G03F7/20
代理机构 代理人
主权项
地址