CLEANING METHOD OF SEMICONDUCTOR SUBSTRATE OR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a cleaning method wherein cleaning capability and cleaning efficiency are improved by prolonging the ozone half life of super-purity ozone water which is manufactured by using ultrapure water whose total organic carbon content is reduced as raw material or solvent, in a cleaning method of a semiconductor substrate or element which uses ozone water. SOLUTION: In the case that cleaning is performed by using cleaning water containing ozone wherein ultrapure water whose total organic carbon content is reduced is dissolved and contained as solvent, ozone obtained by a silent discharge method or an electrolytic method of water is contained in ultrapure water solvent wherein organic solvent is added by using a porosity high molecular macromolecules film, so that ozone half life attenuation can be restrained remarkably, ozone concentration in the solvent can be held to high concentration when cleaning is performed, and cleaning capability and cleaning efficiency can be improved. COPYRIGHT: (C)2004,JPO