| 发明名称 |
SEMICONDUCTOR DEVICE HAVING HIGH DIELECTRIC CONSTANT FILM AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To form a thin gate insulating film in terms of SiO<SB>2</SB>thickness of different film thickness in a simple process concerning a semiconductor device having a high dielectric constant film and its manufacturing method. SOLUTION: A device part having a plurality of insulating films mutually different in film thickness comprising a laminated structure having a high dielectric constant film 5 whose dielectric constant is 10-40 in uniform film thickness on the insulating films 2-4 of a plurality of the film thicknesses whose dielectric constant is less than 10 is provided. COPYRIGHT: (C)2004,JPO
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| 申请公布号 |
JP2004079606(A) |
申请公布日期 |
2004.03.11 |
| 申请号 |
JP20020234487 |
申请日期 |
2002.08.12 |
| 申请人 |
FUJITSU LTD |
发明人 |
IRINO KIYOSHI;MORIZAKI YUSUKE;SUGITA YOSHIHIRO |
| 分类号 |
H01L21/76;H01L21/316;H01L21/822;H01L21/8234;H01L21/8247;H01L27/04;H01L27/088;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/76 |
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