| 摘要 |
PROBLEM TO BE SOLVED: To prevent leak of electrons injected into an active layer side from an n-type cladding layer side in a semiconductor laser device. SOLUTION: In a ridge-guided wave type semiconductor laser device 1B, a double hetero-structure is constructed by laminating an n-type cladding layer 4, an active layer 5, and then a p-type cladding layer 6B, and a p-type etching stop layer which is concurrently a carrier leak preventing layer 7B is formed on the p-type cladding layer 6B. A roughly trapeziform ridge section 10 is formed near the middle of the surface of the carrier leak preventing layer 7B, and a forward current is injected from the side of the ridge 10 to the side of the n-type cladding layer 4. In this structure, the band gap energy of the carrier leak preventing layer 7B is set to be higher than that of the p-type cladding layer 6B and a p-type impurity is doped to the carrier leak preventing layer 7B at a rate not lower than 1×10<SP>19</SP>/cm<SP>-3</SP>, and these prevent the electrons, injected from the side of the n-type cladding layer 4 into the active layer 5, from leaking to the side of the ridge 10. COPYRIGHT: (C)2004,JPO
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