METAL WIRING ETCHING METHOD

摘要

PROBLEM TO BE SOLVED: To lessen dispersion in etched dimensions in a base barrier metal layer by completing with one patterning of a resist into an etching mask when an aluminum alloy wiring layer not less than 3μm in thickness deposited on the base barrier metal layer is patterned as desired in a semiconductor device manufacturing process. SOLUTION: A mask 36 is formed, and then wet etching is performed by using a mixed acid for the removal of part of an aluminum alloy layer 35 for the exposure of part of the surface of a base barrier metal layer 32; small-power plasma etching is performed at 0.2-2.0 W/cm2by using a mixed gas containing a fluorine-based gas for the removal of Si particles deposited on the exposed surface of the base barrier metal layer 32; dry plasma etching is performed by using a mixed gas containing a chlorine-based gas for partial removal of the exposed part of the lower barrier metal layer 32; and then the mask 36 is removed. COPYRIGHT: (C)2004,JPO