发明名称 SEMICONDUCTOR MEMORY DEVICE IN WHICH REFRESH FLAG IS GENERATED AND SEMICONDUCTOR MEMORY SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a refresh flag is generated and to provide a semiconductor memory system. SOLUTION: This semiconductor memory device is provided with an oscillator, a refresh timer, a MRS section, and a refresh control section. The oscillator generates an oscillator output signal. The refresh timer generates a refresh pulse responding to the prescribed first and second control signals, the oscillator output signal, and an external clock signal. The MRS section generates the first control signal controlling a refresh pulse generating time of the refresh timer and the second control signal resetting the refresh time responding to an address signal and an external command . The refresh control section generates a refresh control signal for refreshing a memory cell responding to a refresh pulse. The refresh control signal is outputted to the outside as a refresh flag while a memory cell is refreshed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004079162(A) 申请公布日期 2004.03.11
申请号 JP20030291756 申请日期 2003.08.11
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI JUNBAI
分类号 G11C11/401;G11C7/10;G11C11/406;(IPC1-7):G11C11/406 主分类号 G11C11/401
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