| 摘要 |
A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas including Cl2, O2 and NF3 and a residence time tau of the etching gas is equal to or greater than about 180 msec, the residence time tau being defined as: tau=pV/Q where p represents an inner pressure of the processing chamber; V, an effective volume of etching space formed on the Si substrate or the Si layer; and Q, a flow rate of the etching gas.
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