| 摘要 |
A method of fabricating a TFT comprises: etching a base layer structure ( 9 ) on a substrate ( 1 ) so as to form a gate ( 4 ) with inclined side edges ( 4 a, 4 b) that extend towards an apex region ( 12 ) with a tip ( 13 ) of a radius of a few nanometers, depositing an amorphous silicon channel layer ( 6 ) over the inclined side edges and the apex region, depositing a metal layer ( 8 ) over the channel layer so as to cover the apex region and the side edges, applying a layer of masking material ( 14 ) over the conductive material and selectively etching it so that the metal layer ( 8 ) in the apex region protrudes through and upstands from the masking material, and selectively etching the metal ( 8 ) that protrudes through the masking material ( 14 ) in the apex region such as to provide separate, self aligned source and drain regions ( 8 a, 8 b) overlying the inclined edges with a short channel (L) between them. |
