| 摘要 |
<p>An improved solar cell design and method of fabrication that primarily uses two materials, n-type doped silicon and aluminum to form a p-n alloy junction back contact solar cell. The aluminum alloy junctions are placed on the back (unilluminated) side of the cell, thereby combining the desirable features of aluminum (as a dopant, contact metal and light reflector), with the advantages of a back contact cell. The cell design and method of fabrication includes such features as surface texturing, front and back surface field minority carrier mirrors, surface passivation using oxidation layers, use of Al contacts as light reflectors, intrinsic protection against reverse bias due to contiguous n<+> and p<+> regions, and an improved bus bar contact design suitable for interconnecting cells using a surface mount technology. An improved method of ohmic contact formation uses a self-alignment technique for forming the ohmic contacts.</p> |
