发明名称 |
LATERAL JUNCTION TYPE FIELD EFFECT TRANSISTOR |
摘要 |
<p>A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p<+>-type gate region layer (7) extending into the n-type semiconductor layer (3) and containing p-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3) and an n<+>-type drain region layer (9) spaced from the p<+>-type gate region layer (7) by a predetermined distance and containing n-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3). With this structure, the lateral JFET can be provided that has an ON resistance further decreased while maintaining a high breakdown voltage performance. <IMAGE></p> |
申请公布号 |
EP1396890(A1) |
申请公布日期 |
2004.03.10 |
申请号 |
EP20020736054 |
申请日期 |
2002.06.11 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA, SHIN;HIROTSU, KENICHI;MATSUNAMI, HIROYUKI;KIMOTO, TSUNENOBU |
分类号 |
H01L29/808;H01L21/337;H01L29/06;H01L29/10;H01L29/16;H01L29/24;H01L29/772;(IPC1-7):H01L29/808 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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