3-D spiral stacked inductor on semiconductor material

摘要

A 3-D spiral stacked inductor is provided having a substrate (112) with a plurality of turns (124, 126, 128) in a plurality of levels (150', 150", 150"') wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions (130, 134) are respectively connected to an inner turn and an outermost turn, and a dielectric material (116, 121) contains the first and second connecting portions (130, 134) and the plurality of turns (124, 126, 128) over the substrate (112).