| 摘要 |
1,007,936. Semi-conductor device. CLEVITE CORPORATION. March 20, 1962 [April 26, 1961], No. 10731/62. Heading H1K. The parasitic capacity of a metallic lead deposited on and extending across the surface of the body of a semi-conductor device, with an interposed circulating layer, is minimized by forming in the body, immediately adjacent to the lead, a region of conductivity type opposite to that of the surrounding parts of the body. In a planar transistor, a body of P-type material 10, Fig 1A, is masked at 12, Fig. 1B, and N-type regions 13 are formed by diffusion The surface is then covered with an oxide coating 16, Fig. 1C, which is etched away, Fig. 1D, to provide an opening over the central region 13a, to allow the formation of a P-type region 17, Fig. 1E. An oxide coating formed over the whole surface is then etched away adjacent the three regions 17, 13 and at the lower surface of the body 10, Fig. 1F, and metal is deposited to form leads 26, 27, 28, Fig. 1G, which make ohmic contact with the appropriate regions. Of these, 17 is the emitter, 13a the base and 10 the collector. The capacity which would normally exist between the emitter lead or base lead and the collector is minimized by the presence of the floating P-N junction 32, which forms additional capacity in series with it. In a second embodiment comprising an N-P-N transistor, which is described with reference to Fig. 4, the effect is further enhanced by an additional N-type layer. |
