| 摘要 |
PURPOSE: A TFT substrate and a fabricating method thereof are provided to prevent the corrosion of a shorting bar by using the shorting bar including a silicon material doped with impurities. CONSTITUTION: A TFT substrate includes a gate wiring, a data wiring, and a TFT, which are formed on an insulating substrate(110). The gate wiring is used for transmitting a scan signal. The data wiring is used for transmitting a picture signal. The TFT is connected to the gate wiring and the data wiring. The gate wiring is formed with a gate line(121), a gate pad(125), and a gate electrode(123). The data wiring is formed with a data line(171), a source electrode, a drain electrode(175), and a data pad. The TFT substrate further includes a shorting bar. The shorting bar is connected to the gate pad(125) or the data pad. The shorting bar is formed with n-type or p-type impurities.
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