| 摘要 |
A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n<-> silicon substrate 101, p<+> gate regions 102, 104 formed in one surface of the substrate, a p<+> anode region 111 formed in the other surface of the substrate, a main diode section 134 having a cathode region formed by the silicon substrate and an anode region 131 formed in the one surface of the substrate, and a series arrangement 145 of diodes including plural p<+> anode regions 142, plural n<+> cathode contact regions 143 formed in the first surface of the substrate, and plural conductive layers 144 connecting these anode regions and cathode contact regions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode 110 and an anode electrode 113 of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section. <IMAGE> |
