Interlayer insulation film used for multilayer interconnect of semiconductor integrated circuit and method of manufacturing the same

摘要

An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.