| 摘要 |
PURPOSE: A method for forming an STI(Shallow Trench Isolation) of a semiconductor device is provided to easily control threshold voltage of a parasitic transistor generated at top corner portion of the STI. CONSTITUTION: A pad oxide pattern(101) and a pad nitride pattern(102) are sequentially formed on a semiconductor substrate(100). A doping region(104) is formed on the top corner portion by implanting boron ions into the exposed substrate. A trench is then formed. A sidewall oxide layer is formed in the trench by sequentially performing cleaning and oxidation processing. Then, an isolation layer is formed by filling an oxide layer in the trench.
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