发明名称 SEMICONDUCTOR DEVICE WITH TEST ELECTRICAL GROUP PATTERN
摘要 PURPOSE: A semiconductor device is provided to prevent generation of particles in a lower electrode by using a line type TEG(Test Electrical Group) pattern. CONSTITUTION: A storage node(24) is arranged to cross the cell gates and spaced apart from cell gates(21). A gate node(21) is connected to the cell gates. A TEG pattern(28) is connected to the storage node. At this time, the TEG pattern(28) has a line shape having constant width. Preferably, the line-width of the TEG pattern(28) is 0.5 micrometer below.
申请公布号 KR20040020532(A) 申请公布日期 2004.03.09
申请号 KR20020052141 申请日期 2002.08.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG U;OH, JAE HUI
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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