发明名称 |
SEMICONDUCTOR DEVICE WITH TEST ELECTRICAL GROUP PATTERN |
摘要 |
PURPOSE: A semiconductor device is provided to prevent generation of particles in a lower electrode by using a line type TEG(Test Electrical Group) pattern. CONSTITUTION: A storage node(24) is arranged to cross the cell gates and spaced apart from cell gates(21). A gate node(21) is connected to the cell gates. A TEG pattern(28) is connected to the storage node. At this time, the TEG pattern(28) has a line shape having constant width. Preferably, the line-width of the TEG pattern(28) is 0.5 micrometer below.
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申请公布号 |
KR20040020532(A) |
申请公布日期 |
2004.03.09 |
申请号 |
KR20020052141 |
申请日期 |
2002.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DONG U;OH, JAE HUI |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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地址 |
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