METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to enhance capacitance and to improve leakage current by using a dielectric film including an YON layer and an Al2O3 layer. CONSTITUTION: An interlayer dielectric(3) with a contact plug(6) is formed on a semiconductor substrate(1). A lower electrode(10) is formed to contact the contact plug. The surface of the lower electrode is treated by nitridation. A dielectric film(11) is formed by forming sequentially an YON layer(11a) and an Al2O3 layer(11b) on the lower electrode. Then, an upper electrode is formed on the dielectric film.