Semiconductor integrated circuit including a circuit protecting against static electricity

摘要

When static electricity having an excessive voltage is applied to a VSS terminal, the static electricity may be transmitted to an inner cell directly connected to a VSS cell before the static electricity is discharged to the outside via an electrostatic protection circuit, possibly resulting in electrostatic destruction. Bypasses are thus provided to bypass the static electricity applied to a VSS terminal to a higher wiring layer, which allow only excessive static electricity to be selectively discharged to the outside via an electrostatic protection circuit.