| 摘要 |
A semiconductor device which comprises a first electrode 32, a ferroelectric film 36 formed above the first electrode, and a second electrode 40 formed above the ferroelectric film, further comprises intermediate layers 34, 38 formed at at least one of the boundary between the first electrode and the ferroelectric film, and the boundary between the ferroelectric film and the second electrode, such intermediate layer(s) having a perovskite crystal structure. Because such intermediate layers having perovskite crystal structure are formed between the first and/or second electrodes and the ferroelectric film, even when a base metal is used as a material for the bottom and/or top electrode of a ferroelectric capacitor, the ferroelectric film can have crystal structure exhibiting ferroelectricity. Base metals can be used as materials for the bottom and top electrodes of the ferroelectric capacitor to decrease the cost of semiconductor devices. Materials which it has been difficult to use for the bottom and top electrodes of a ferroelectric capacitor can now be used to simplify the fabrication processes and improve electric characteristics. <IMAGE>
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