| 摘要 |
PURPOSE: A method of fabricating a thin film transistor substrate of a liquid crystal display is provided to reduce defects caused by a wet etching process or a photoresist stripping process. CONSTITUTION: The first metal layer(221,241,261), the second metal layer(222,242,262) are formed on a substrate(10). An oxide or nitride layer(223,243,263) is formed on the second metal layer using oxygen or nitrogen plasma. A photoresist pattern is formed on the oxide or nitride layer. The oxide or nitride layer, the second and first metal layers are patterned using the photoresist pattern to form a gate pattern. The photoresist pattern is stripped. A gate insulating layer(30) is formed on the gate pattern. A semiconductor layer and a doped amorphous silicon layer are formed on the gate insulating layer and patterned, to form a semiconductor layer pattern(40) and a resistant contact layer pattern(55,56). A data line, a data pad(68), source and drain electrodes(65,66) are formed on the substrate. A passivation layer(70) is formed on the overall surface of the substrate and selectively etched to form contact holes(76,78) that exposes the drain electrode and a data pad. An ITO layer formed and etched to form a pixel electrode(82). |
