发明名称 |
Chemical-mechanical polishing slurry and method |
摘要 |
The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is <SMALLCAPS>L</SMALLCAPS>-lysine and/or <SMALLCAPS>L</SMALLCAPS>-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.
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申请公布号 |
US6702954(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US20000692730 |
申请日期 |
2000.10.19 |
申请人 |
FERRO CORPORATION |
发明人 |
HER YIE-SHEIN;SRINIVASAN RAMANATHAN;BABU SURYADEVARA;RAMARAJAN SURESH |
分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/321;(IPC1-7):C09K13/00 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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