发明名称 |
Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method |
摘要 |
To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like. |
申请公布号 |
US6703171(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020072880 |
申请日期 |
2002.02.12 |
申请人 |
HITACHI, LTD. |
发明人 |
HATTORI TAKASHI;GOTOH YASUKO;SATOH HIDETOSHI;TANAKA TOSHIHIKO;SHIRAISHI HIROSHI |
分类号 |
G03F7/004;G03F1/00;G03F1/08;G03F1/10;G03F1/14;G03F1/30;G03F1/32;G03F1/40;G03F1/42;G03F1/54;G03F1/60;G03F1/68;G03F1/70;G03F1/80;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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