SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a fabricating method thereof are provided to obtain a gap between bit lines for increasing a contact without reducing the width of bit line and the gap between bit lines by forming the bit line having a sidewall spacer and the bit line having an upper spacer, alternately. CONSTITUTION: The first conductive layer(22a) is formed on a semiconductor substrate(20). A photoresist pattern is formed on the first conductive layer(22a). The first bit line(22) is formed by performing an etch process using the photoresist pattern. The first insulating layer(22b) is formed thereon. A sidewall spacer is formed by etching the first insulating layer(22b). The first spacer(26) is formed to define a region for forming the second bit line(28) by depositing the first oxide layer(20) on the entire surface of the resultant. The second bit line is formed by depositing the second conductive layer on the region for forming the second bit line(28). The second insulating layer(22c) is formed on the entire surface of the second bit line. A contact(C) is formed by etching the first oxide layer.