| 摘要 |
A substrate coated with a transparent conductive film is manufactured by: disposing a substrate 3 and a target 5 constituted of alloy of In and Sn in a film deposition chamber 1; leading an Ar gas ion beam into the film deposition chamber 1, to cause collision of the ion beam with the target 5, sputtering-emission of constitutive atoms of the target 5, and supply of the emitted atoms to the substrate 3; and leading oxide gas including oxygen radicals as a main element thereof from an ECR radical source 6 into the film deposition chamber 1, to deposit an ITO film 9 on the substrate 3. In this manufacturing method, a film is deposited on a film or substrate including an organic material without damaging the organic material. The deposited film has low resistivity, high transmission and preferable flatness.
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