CONTACT OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A contact of a semiconductor device and a method for forming the same are provided to be capable of enhancing gap-fill margin at filling a conductive layer in a contact hole. CONSTITUTION: The first photoresist pattern is formed on a semiconductor substrate(10) having an oxide layer(20). The first etching portion is formed by selectively etching the oxide layer using the first photoresist pattern. The second photoresist pattern is formed by flowing the first photoresist pattern. Then, the second etching portion is formed by wet-etching of the first etching portion using the second photoresist pattern. A contact hole is formed by dry-etching the second and first etching portion using the first photoresist pattern. A contact is then formed by filling a conductive layer in the contact hole.