发明名称 |
Semiconductor device having metallized interconnect structure and method of fabrication |
摘要 |
A semiconductor device having a metallized interconnect structure includes a conductor having an upper contact surface and an edge surface depending from the upper contact surface. An opening in an insulating layer overlying the conduct exposes at least a portion of the upper contact surface and at least a portion of edge surface. A liner material covers the edge surface and a portion of the upper contact surface exposed by the opening. An electrically conductive material resides within the opening and is separated from the edge surface by the liner material. A method for fabricating the metallized contact structure includes the deposition and anisotrophic etching of a liner material that is differentially etchable with respect to the insulating layer overlying the conductor. By covering the edge surface of the conductor, a metallized contact structure is provided that can be reliably fabricated using zero-overlap design tolerances.
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申请公布号 |
US6703305(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020164484 |
申请日期 |
2002.06.05 |
申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
BUI NGUYEN DUC;OMID-ZOHOOR FARROKH KIA |
分类号 |
H01L21/60;H01L21/768;(IPC1-7):H01L21/476;H01L21/44;H01L21/461 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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