发明名称 Polymer, resist composition and patterning process
摘要 A polymer comprising recurring units of formulae (1) and (2) wherein R<1 >and R<3 >are H or methyl, R<2 >and R<4 >are C1-15 alkyl, R<5 >to R<8 >are H, or R<5 >and R<7>, and R<6 >and R<8 >form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.
申请公布号 US6703183(B2) 申请公布日期 2004.03.09
申请号 US20020241530 申请日期 2002.09.12
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI TSUNEHIRO;KINSHO TAKESHI;HASEGAWA KOJI;WATANABE SATOSHI;NAGURA SHIGEHIRO
分类号 C08F220/18;G03F7/039;H01L21/027;(IPC1-7):G03F7/004;C08F36/00 主分类号 C08F220/18
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