发明名称 |
Mask defect repair method |
摘要 |
First, a region including the defect is observed with the atomic force microscope (AFM) and a pattern putting together the shape and position of the defect is extracted from and AFM image. The extracted pattern is then converted to a shape format for a for an ion beam defect repairing apparatus and transferred. At this time, a pattern that is observable with the ion beam defect repairing apparatus is selected as a position alignment pattern. The extracted/converted position alignment pattern is combined with a pattern corresponding to a secondary electron image or a secondary ion image. Repairing of the irradiation region and similar repairing is then performed with respect to matching processing for a pattern for a normal secondary ion image or secondary electron image for the ion beam defect repairing apparatus and extraction is performed by the AFM. A defect region finely adjusted using alignment of the position alignment pattern is then corrected using an ion beam. |
申请公布号 |
US6703626(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020047974 |
申请日期 |
2002.01.15 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
TAKAOKA OSAMU;YABE SATORU |
分类号 |
G03F1/08;G01N23/04;G01Q20/02;G01Q60/24;G03F1/00;G03F1/36;G03F1/72;G03F1/74;H01L21/027;(IPC1-7):G01N23/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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