发明名称 Mask defect repair method
摘要 First, a region including the defect is observed with the atomic force microscope (AFM) and a pattern putting together the shape and position of the defect is extracted from and AFM image. The extracted pattern is then converted to a shape format for a for an ion beam defect repairing apparatus and transferred. At this time, a pattern that is observable with the ion beam defect repairing apparatus is selected as a position alignment pattern. The extracted/converted position alignment pattern is combined with a pattern corresponding to a secondary electron image or a secondary ion image. Repairing of the irradiation region and similar repairing is then performed with respect to matching processing for a pattern for a normal secondary ion image or secondary electron image for the ion beam defect repairing apparatus and extraction is performed by the AFM. A defect region finely adjusted using alignment of the position alignment pattern is then corrected using an ion beam.
申请公布号 US6703626(B2) 申请公布日期 2004.03.09
申请号 US20020047974 申请日期 2002.01.15
申请人 SEIKO INSTRUMENTS INC. 发明人 TAKAOKA OSAMU;YABE SATORU
分类号 G03F1/08;G01N23/04;G01Q20/02;G01Q60/24;G03F1/00;G03F1/36;G03F1/72;G03F1/74;H01L21/027;(IPC1-7):G01N23/00 主分类号 G03F1/08
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