Semiconductor device with integrated circuit elements of group III-V comprising means for preventing pollution by hydrogen

摘要

A semiconductor device comprising integrated circuit elements realized by means of a stack of layers of semiconductor materials provided on a substrate of semiconductor material and comprising means for preventing the pollution of the circuit elements and of the substrate by hydrogen originating from their environment is characterized in that said means are formed by a layer of a material which absorbs hydrogen (or hydrogen getter) (10), which forms a pattern which is integrated with the circuit elements and whose outer surface (11) is exposed and in contact with the environment. This device, of the MMIC type, forms part of a module of a spatial or terrestrial telecommunication system.