发明名称 |
Production method for shallow trench isolation |
摘要 |
An improved method for producing a semiconductor device in which overpolishing is prevented at a chemical mechanical polishing time to eliminate the influence of peripheries on the object part. A plasma oxide film is formed on a semiconductor substrate so as to fill a recess and a trench. With the use of a resist film as a mask, the plasma oxide film is selectively etched to leave an overpolish-preventing support member in a neighborhood of the recess, which is a photo-related mark, for providing a support against overpolishing at a chemical mechanical polishing time. The surface of the semiconductor substrate is polished by chemical mechanical polishing. Thereafter, a nitride film and an oxide film are removed.
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申请公布号 |
US6703287(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20010791763 |
申请日期 |
2001.02.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJIISHI YOSHITAKA;UENO ATSUSHI |
分类号 |
H01L21/76;H01L21/3105;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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