发明名称 |
Insulated gate semiconductor device and method of manufacturing the same |
摘要 |
Impurity regions 110 that can form an energy barrier are artificially and locally disposed in a channel formation region 111. The impurity regions 110 restrain a depletion layer that extends from a drift region 102 toward a channel formation region 111, and prevents a short channel effect caused by the depletion layer, with the result that an insulated gate semiconductor device high in withstand voltage can be manufactured without lowering the operation speed.
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申请公布号 |
US6703671(B1) |
申请公布日期 |
2004.03.09 |
申请号 |
US19990362804 |
申请日期 |
1999.07.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;FUKUNAGA TAKESHI |
分类号 |
H01L21/265;H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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