| 摘要 |
PURPOSE: A non-volatile ferroelectric memory control device is provided to reduce the power consumption by performing locally a cell operation for column addresses and block/low addresses and lengthen a lifetime of an FRAM by reducing the voltage stress applied to an FRAM cell. CONSTITUTION: A non-volatile ferroelectric memory control device includes a column address latch(3), a column decoder(4), a low address latch(6), and a chip control signal generator(14). The column address latch(3) is used for latching a column address according to a chip enable signal and outputting the latched column address. The column decoder(4) is used for decoding the latched column address. The low address latch(6) is used for latching a low address according to the chip enable signal and outputting the latched low address. The chip control signal generator(14) is used for outputting a chip control signal to control an operation of a chip according to an address transition detection signal.
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