| 摘要 |
PURPOSE: To obtain a low oscillation threshold current characteristic and excellent self-oscillation characteristic by adjusting the cumulative strain quantity of quantum well layers and quantum barrier layers, sum total of the thicknesses of the quantum well layers and quantum barrier layers, and the shortest distance between an active layer and current blocking layer so that they can fall within specific ranges. CONSTITUTION: A semiconductor laser element is provided with an active layer 5 formed by alternately forming AlGaInP quantum well layers having compressive strains and AlGaInP quantum barrier layers having compressive strains upon another, clad layer 7 of a second conductivity, and current blocking layer 11 which has a stripe-like current path section having a prescribed width W and a first conductivity. The cumulative strain quantity of the quantum well layers and quantum barrier layers which is the sum total of the product of the strain quantity and thickness of each quantum well layer and the product of the strain quantity and thickness of each quantum barrier layer, sum total of the thickness of each quantum well layer and the thickness of each quantum barrier layer, and the shortest distance between the active layer 5 and current blocking layer 11 are respectively adjusted so that they can fall within the ranges of -7×10<-10> m to -1.88×10<-10> m, 0.07μm to 0.15μm, and 0.27μm to 0.44μm. |
