| 摘要 |
PURPOSE: To provide a semiconductor device in which the area of a photodiode can be reduced in pixels. CONSTITUTION: Pixels are arranged in matrix on a semiconductor substrate. Each pixel includes a photodiode, a reset transistor, a source follower transistor, and a select transistor. An active region arranged with the photodiode and the transistor includes a first region arranged with the photodiode, and a second region having a part elongated in a first direction. Gate electrodes of the reset transistor, the source follower transistor, and the select transistor intersect the part elongated in the first direction of the second region. Wiring in the pixel connects the drain region of the reset transistor with the gate electrode of the source follower transistor.
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