METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a flash memory device is provided to be capable of preventing the influence upon a threshold voltage according to the dielectric material filled between gate lines. CONSTITUTION: Two types of gate stacks(200) having a different line width are formed at the upper portion of a semiconductor substrate(100). The first impurity layer(310) is formed at both sides of each gate stack. The first spacer(415) is formed at both sidewalls of the gate stack. An ion implantation mask is formed at the upper portion of the resultant structure for exposing the second gate stack. An LDD(Lightly Doped Drain) structure is completed by forming the second impurity layer(350) at both sides of the second gate stack. The second spacer(435) is formed at the upper portion of the first spacer. An etching barrier(450) is formed at the upper portion of the second spacer. An interlayer dielectric(470) is formed on the entire surface of the resultant structure.