| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which yield degradation caused by the fluctuation of the ferroelectric characteristic of a ferroelectric thin film can be suppressed. SOLUTION: The upper limit valueΔQ<SB>MAX</SB>(%) of the in-plane fluctuation of the magnitude of the remanent polarization of a thin film formed on a substrate and composed of an ABO<SB>3</SB>type ferroelectric material is decided. The substrate is heated to the crystallization temperature of the ferroelectric material or higher, and at the same time, the heating of the substrate is controlled so that a difference between highest and lowest values of the in-plane temperature of the substrate becomes≤0.7×ΔQ<SB>MAX</SB>(°). Then the ferroelectric thin film is formed on the substrate by supplying source gas of the thin film onto the substrate while the heating the substrate is controlled so that the difference between the highest and the lowest values of the in-plane temperature of the substrate becomes≤0.7×ΔQ<SB>MAX</SB>(°). COPYRIGHT: (C)2004,JPO
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