发明名称 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
摘要 A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands.
申请公布号 US2004043635(A1) 申请公布日期 2004.03.04
申请号 US20020230193 申请日期 2002.08.28
申请人 MICRON TECHNOLOGY, INC. 发明人 VAARTSTRA BRIAN A.
分类号 C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L21/31 主分类号 C23C16/40
代理机构 代理人
主权项
地址