发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 There is provided such a structure that a first insulating layer, a conductive pattern, a second insulating layer, a capacitor Q, a third insulating layer, and a lower electrode leading wiring are formed sequentially on a semiconductor substrate, and a lower electrode of the capacitor is connected to an upper surface of the conductive pattern, and the lower electrode leading wiring is also connected electrically to the conductive pattern from its upper side.
申请公布号 US2004043518(A1) 申请公布日期 2004.03.04
申请号 US20030391601 申请日期 2003.03.20
申请人 FUJITSU LIMITED 发明人 SAIGOH KAORU
分类号 H01L21/768;H01L21/02;H01L21/316;H01L21/3205;H01L21/8246;H01L23/52;H01L27/06;H01L27/105;H01L27/115;(IPC1-7):H01L21/00;H01L21/823;H01L21/824;H01L29/76 主分类号 H01L21/768
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