发明名称 Substrate processing method and substrate processing apparatus
摘要 On the occasion of developing processing, a mixed solution produced by stirring a developing solution and a solution with a specific gravity smaller than the developing solution is supplied to the front surface of a substrate and left as it is for a fixed period of time. After the mixed solution is separated into two layers of which the lower layer is the developing solution and the upper layer is the solution, developing progresses all at once in the entire surface of the substrate. Hence, time difference in start time of developing does not occur in the surface of the substrate, thereby enabling uniform developing and an improvement in line width uniformity of a resist pattern film in the surface of the substrate.
申请公布号 US2004042790(A1) 申请公布日期 2004.03.04
申请号 US20030653999 申请日期 2003.09.04
申请人 TOKYO ELECTRON LIMITED 发明人 TOSHIMA TAKAYUKI;ORII TAKEHIKO
分类号 H01L21/027;G03F7/30;G03F7/32;(IPC1-7):G03D5/00 主分类号 H01L21/027
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