发明名称 SEMICONDUCTOR WAFER, SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor wafer, a semiconductor chip, and a semiconductor device and its manufacturing method for realizing a high density, low-profile, and high bonding reliability of a bonding pad. SOLUTION: The semiconductor chip is directly mounted on a opposed circuit board 20 by solder paste 22 on a bonding pad 21. The semiconductor device has an input/output terminal 5 for inputting and outputting signal to and from the semiconductor circuit formed on the semiconductor chip, and a first insulation layer 2 formed on a circuit forming surface 1c of the semiconductor chip. The device also has a Cu sputtering layer 8a and Cu plating layers 8b electrically connected to the input/output terminal 5. A second insulation layer 4 is formed so as to cover the Cu plating layers 8b, and a plating layer 10 comprising tin is formed in openings 11. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004072043(A) 申请公布日期 2004.03.04
申请号 JP20020233055 申请日期 2002.08.09
申请人 HITACHI MAXELL LTD 发明人 KANAI TOMONORI;KISHIMOTO SEIJI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/12;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L23/52
代理机构 代理人
主权项
地址