| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in sensitivity, resolution, and moreover, a pattern profile and line edge roughness relating to pattern formation by irradiation of X-rays, electron beams or ion beams. <P>SOLUTION: The positive resist composition realizes pattern drawing with X-rays, electron beams or ion beams and contains: (A) a phenol-based polymer which is insoluble or hardly soluble with an alkali aqueous solution and changes into soluble by the effect of an acid; (B) a compound having a specified structure which generates sulfonic acid by irradiation of X-rays, electron beams or ion beams; and (C) a nonionic compound having a specified structure which generates sulfonic acid by irradiation of X-rays, electron beam or ion beams. <P>COPYRIGHT: (C)2004,JPO |
