METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which reduces the number of conditioning batches without depending on an operator's experience and is capable of making the films of substrates uniform in thickness in a batch. SOLUTION: The method of manufacturing a semiconductor device comprises steps of acquiring temperature data prior to batch processing (step S10); calculating an interference matrix M on the basis of the acquired temperature data (step S12); carrying out batch processing twice (step S14); measuring the film forming rate of the substrate (step S16); calculating the set temperature of each heater zone for obtaining a target film forming rate on the basis of a relation between the set temperature of each heater zone and the film forming rate of the substrate obtained through the batch processing carried out twice (step S20), and carrying out a third batch processing at the calculated set temperature of each heater zone (step S22). COPYRIGHT: (C)2004,JPO