| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method that can prevent the occurrence of peeling due to lifting of an edge of an insulation film formed by an application method, and to provide a method for manufacturing a semiconductor device that can realize low cost and high yield. SOLUTION: An applied insulation film 11 is formed on a wafer 10 by application by spinning, and the outer periphery of the applied insulation film 11 is removed by a rinsing liquid. In this case, a mixed solvent of a mesitylene and a propylene glycol monomethyl eter acetate is used as a rinsing liquid, thus keeping a lifting part 11a of an edge at a ratio b/a of 1.1 or less. COPYRIGHT: (C)2004,JPO
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