| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element exhibtiting good magnetic characteristics by suppressing deterioration in the variation rate of the resistance due to heat treatment, and to provide a magnetic memory comprising the magnetoresistive effect element and exhibiting excellent writing characteristics. SOLUTION: A pair of ferromagnetic layers (a pinned magnetization layer 5 and a free magnetization layer 7) are laid oppositely in a layer through an intermediate layer 6 and the resistance is varied by supplying a current perpendicularly to the film surface. The magnetoresistive element 1 comprises the pair of ferromagnetic layers 5 and 7 at least one of which containing an amorphous ferromagnetic material having a crystallization point of 623K or above, and the magnetic memory comprises the magnetoresistive element 1, and a bit line and a word line sandwiching the magnetoresistive element 1 in the thickness direction. COPYRIGHT: (C)2004,JPO
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