| 摘要 |
There are provided the steps of forming a first insulating film over a semiconductor substrate, forming a capacitor having a lower electrode, a ferroelectric layer, and an upper electrode over the first insulating film, and growing a second insulating film over the first insulating film and the capacitor by using a mixed gas containing a compound gas of oxygen and nitrogen, TEOS, and oxygen. Accordingly, characteristics of the capacitor can be improved irrespective of the capacitor forming position on the insulating layer.
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