发明名称 Substrate processing apparatus and substrate processing method drying substrate by spraying gas
摘要 A first gas nozzle and a second gas nozzle are fixedly provided in the vicinity of the forward end of a nozzle arm. The nozzle arm is rotated along a locus R while a substrate rinsed with deionized water is rotated, for discharging nitrogen gas from the first and second gas nozzles. Visible moisture is loosely expelled from the upper surface of the substrate by spraying the nitrogen gas from the first gas nozzle, and moisture slightly remaining on a fine pattern or the like can also be completely removed by spraying the nitrogen gas from the second gas nozzle to the same region of the substrate as that sprayed with the nitrogen gas by the first gas nozzle. Consequently, the surface of the substrate can be stably and reliably dried. Thus, a substrate processing apparatus capable of stably and reliably drying the surface of the substrate is provided.
申请公布号 US2004040177(A1) 申请公布日期 2004.03.04
申请号 US20030634432 申请日期 2003.08.05
申请人 DAINIPPON SCREEN MFG., LTD. 发明人 IZUMI AKIRA
分类号 F26B5/14;H01L21/00;H01L21/304;(IPC1-7):F26B3/00 主分类号 F26B5/14
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